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Inspired by the successful synthesis of two-dimensional (2D) V-based Janusdichloride monolayers with intrinsic ferromagnetism and high Curie temperature(T$_{c}$), the electronic structure, spin-valley splitting and magneticanisotropy of Janus 2H-VSeS monolayers are investigated in detailed usingfirst-principles calculations. The results show that the Janus 2H-VSeSmonolayer exhibits a large valley splitting of 105meV, high T$_{c}$ of 278K andgood magnetocrystalline anisotropy (0.31meV) contributed by the in-planed$_{x^{2}-y^{2}}$/d$_{xy}$ orbitals of V atoms. The biaxial strain($-$8%<$\varepsilon$<8%) can effectively tune the magnetic moments of V atom,valley splitting $\Delta$E, T$_{c}$ and MAE of Janus 2H-VSeS monolayer. Thecorresponding $\Delta$E and T$_{c}$ are adjusted from 72meV to 106.8meV andfrom 180K to 340K, respectively. The electronic phase transition from bipolarmagnetic semiconductor (BMS) to half-semiconductor (HSC), spin gaplesssemiconductor (SGS), and half-metal (HM) is also observed due to the change ofV 3d-orbital occupation. Due to the broken space- and time-reversal symmetry,the opposite valley charge carriers carry opposite Berry curvature, which leadsto prominent anomalous Hall conductivity at the K and K$^{\prime}$ valleys. Themaximum modulation of Berry curvature can reach to 45% and 9.5% by applying thebiaxial strain and charge carrier doping, respectively. The stable in-planemagnetocrystalline anisotropy and large spontaneous valley polarization makethe ferromagnetic Janus 2H-VSeS monolayer a promising material for achievingthe spintronics and valleytronics devices.

Controlled Curie temperature, magnetocrystalline anisotropy, and valley polarization in 2D ferromagnetic Janus 2H-VSeS monolayer