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Titanium nitride is an attractive material for a range of superconductingquantum-circuit applications owing to its low microwave losses, high surfaceinductance, and chemical stability. The physical properties and deviceperformance, nevertheless, depend strongly on the quality of the materials.Here we focus on the highly crystalline and epitaxial titanium nitride thinfilms deposited on sapphire substrates using magnetron sputtering at anintermediate temperature (300$^{\circ}$C). We perform a set of systematic andcomprehensive material characterization to thoroughly understand thestructural, chemical, and transport properties. Microwave losses at lowtemperatures are studied using patterned microwave resonators, where the bestinternal quality factor in the single-photon regime is measured to be$3.3\times 10^6$, and $> 1.0\times 10^7$ in the high-power regime. Adjustedwith the material filling factor of the resonators, the microwave loss-tangenthere compares well with the previously reported best values for superconductingresonators. This work lays the foundation of using epitaxial titanium nitridefor low-loss superconducting quantum circuits.

Epitaxial titanium nitride microwave resonators: Structural, chemical, electrical, and microwave properties