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Two-dimensional (2D) van der Waals (vdW) magnetic materials have garneredconsiderable attention owing to the existence of magnetic order down to atomicdimensions and flexibility towards interface engineering, offering anattractive platform to explore novel spintronic phenomena and functionalities.Understanding of the magnetoresistive properties and their correlation to theunderlying magnetic configurations is essential for 2D vdW-based spintronic orquantum information devices. Among the promising candidates, vdW ferromagnet(FM) Fe3GeTe2 shows an unusual magnetotransport behavior, tunable by doping atthe magnetic (Fe) site, and tentatively arising from complicated underlyingspin texture configurations. Here, we explore an alternative route towardsmanipulation of magnetotransport properties of a vdW FM without directlyaffecting the magnetic site i.e., by doping at the non-magnetic (Ge) site ofFe3(Ge,As)Te2. Interestingly, doping at the non-magnetic (Ge) site results inan unconventional Hall effect whose strength was considerably modified byincreasing As concentration, possibly arising from emergent electromagneticbehavior from underlying complicated spin configurations. The present resultsprovide a possible route to understand the intricate role played by thenon-magnetic (Ge) atom towards magnetic properties of vdW FMs, and shows anovel direction towards tailoring of underlying interactions responsible forthe stabilization of non trivial spin textures in 2D magnetic vdW materials.

Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet