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As the first intrinsic antiferromagnetic topological insulator,MnBi$_2$Te$_4$ has provided a platform to investigate the interplay of bandtopology and magnetism as well as the emergent phenomena arising from such aninterplay. Here we report the chemical-vapor-transport (CVT) growth andcharacterization of MnBi$_2$Te$_4$, as well as the observation of thefield-induced quantized Hall conductance in 6-layer devices. Throughcomparative studies between our CVT-grown and flux-grown MnBi$_2$Te$_4$ viamagnetic, transport, scanning tunneling microscopy, and angle-resolvedphotoemission spectroscopy measurements, we find that CVT-grown MnBi$_2$Te$_4$is marked with higher Mn occupancy on the Mn site, slightly higherMn$_{\rm{Bi}}$ antisites, smaller carrier concentration and a Fermi levelcloser to the Dirac point. Furthermore, a 6-layer device made from theCVT-grown sample shows by far the highest mobility of 2500 cm$^2$V$\cdot$s inMnBi$_2$Te$_4$ devices with the quantized Hall conductance appearing at 1.8 Kand 8 T. Our study provides a new route to obtain high-quality single crystalsof MnBi$_2$Te$_4$ that are promising to make superior devices and realizeemergent phenomena, such as the layer Hall effect and quantized anomalous halleffect, etc.

Growth, characterization and Chern insulator state in MnBi$_2$Te$_4$ via the chemical vapor transport method