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Temperature dependent (4K-300K) photoluminescence and transmission spectraare analyzed to study the effect of changing the different components of aperovskite compound, be it A, B, or X. Four different films are compared:FAMAPbSnI3, FAPbI3, FAMAPbI3, and FAPbBr3. The low temperature resultshighlight the changes that occur especially, underlying ones that are easilymasked at room temperature. The overall Stokes shift is of similar magnitude atroom temperature for the 3 Pb only based samples. This is governed by theinteraction strength GammaLO, phonon energy ELO, and the exciton binding energyEex. One exception to this behavior is the Sn-based FAMAPbSnI3 film which showsa lack of Stokes shift between the absorption and photoluminescence.However,the strong absorption (more than 100 meV) below the band gap isindicative of an excitonic feature that has a large density of states.Transient absorption measurements confirm the trends observed in continuouswave (CW) measurements, the 3 Pb only films all show the convolution of anexcitonic feature within 20 meV of the band gap as a contributing factor to thephotobleach along with a region of high energy PIA. However, the behavior forthe Sn-based film is notably different (just as in the CW measurements) with anunusual low energy PIA and a lack of high energy PIA. The large low energy PIAis attributed to the large sub band gap absorption observed in the CWtransmission/absorption measurements. Notably regardless of interchangingcomponents, the slow cooling of carriers in metal-halide perovsites showslittle effect of GammaLO, ELO, and Eex. As such, here it is proposed: while theinitial cooling of carriers is attributed to LO phonons, the overall cooling ofcarriers is dominated by the intrinsic low thermal conductivity of allmetal-halide perovskites which limits the dissipation of acoustic phonons inthese systems.

Hot carrier redistribution, electron-phonon interaction, and their role in carrier relaxation in thin film halide perovskites