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Compensated ferrimagnets are promising materials for fast spintronicapplications based on domain wall motion as they combine the favourableproperties of ferromagnets and antiferromagnets. They inherit fromantiferromagnets immunity to external fields, fast spin dynamics and rapiddomain wall motion. From ferromagnets they inherit straightforward ways to readout the magnetic state, especially in compensated half metals, where electronsflow in only one spin channel. Here, we investigate domain structure incompensated half-metallic Mn2Ru0.5Ga films and assess their potential in domainwall motion-based spin-electronic devices. Our focus is on understanding andreducing domain wall pinning in unpatterned epitaxial thin films. Two modes ofmagnetic reversal, driven by nucleation or domain wall motion, are identifiedfor different thin film deposition temperatures $(T_{dep})$. The magneticaftereffect is analysed to extract activation volumes $(V^*)$, activationenergies $(E_A)$, and their variation $({\Delta}E_A)$. The latter is decisivefor the magnetic reversal regime, where domain wall motion dominated reversal(weak pinning) is found for ${\Delta}E_A<0.2$ eV and nucleation dominatedreversal (strong pinning) for ${\Delta}E_A>0.5$ eV. A minimum ${\Delta}E_A=28$meV is found for $T_{dep}=290{\deg}$C. Prominent pinning sites are visualizedby analysing virgin domain patterns after thermal demagnetization. In thesample investigated they have spacings of order 300 nm, which gives an upperlimit of the track-width of spin-torque domain-wall motion-based devices.

Magnetic reversal and pinning in a perpendicular zero moment half-metal