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Helium implantation in epitaxial thin films is a way to control theout-of-plane deformation independently from the in-plane strain controlled byepitaxy. In particular, implantation by means of a helium microscope allows forlocal implantation and patterning down to the nanometer resolution, which is ofinterest for device applications. We present here a study of bismuth ferrite(BiFeO3) films where strain was patterned locally by helium implantation. Ourcombined Raman, XRD and TEM study shows that the implantation causes anelongation of the BiFeO3 unit cell and ultimately a transition towards theso-called super-tetragonal polymorph via states with mixed phases. In addition,TEM reveals the onset of amorphization at a threshold dose that does not seemto impede the overall increase in tetragonality. The phase transition from theR-like to T-like BiFeO3 appears as first-order in character, with regions ofphase coexistence and abrupt changes in lattice parameters.

Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation