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We report an investigation of the spin- to charge-current conversion insputter-deposited films of topological insulator $Bi_2Se_{3}$ onto singlecrystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films ofPermalloy $(Py = Ni_{81}Fe_{19})$. Pure spin current was injected into the$Bi_{2}Se_{3}$ layer by means of the spin pumping process in which the spinprecession is obtained by exciting the ferromagnetic resonance of theferromagnetic film. The spin-current to charge-current conversion, occurring atthe $Bi_{2}Se_{3}/$ferromagnet interface, was attribute to the inverseRashba-Edelstein effect (IREE). By analyzing the data as a function of the$Bi_{2}Se_{3}$ thickness we calculated the IREE length used to characterize theefficiency of the conversion process and found that 1.2 pm$\leq|{\lambda}_{IREE}|\leq$ 2.2 pm. These results support the fact that thesurface states of $Bi_{2}Se_{3}$ have a dominant role in the spin-chargeconversion process, and the mechanism based on the spin diffusion process playsa secondary role. We also discovered that the spin- to charge-current mechanismin $Bi_{2}Se_{3}$ has the same polarity as the one in Ta, which is the oppositeto the one in Pt. The combination of the magnetic properties of YIG and Py,with strong spin-orbit coupling and dissipationless surface statestopologically protected of $Bi_{2}Se_{3}$ might lead to spintronic devices withfast and efficient spin-charge conversion.

Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$