English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The proposal that very small N\'eel skyrmions can form in SrRuO$_3$/SrIrO$_3$epitaxial bilayers and that the electric field-effect can be used to manipulatethese skyrmions in gated devices strongly stimulated the recent research ofSrRuO$_3$ heterostructures. A strong interfacial Dzyaloshinskii-Moriyainteraction, combined with the breaking of inversion symmetry, was consideredas the driving force for the formation of skyrmions in SrRuO$_3$/SrIrO$_3$bilayers. Here, we investigated nominally symmetric heterostructures in whichan ultrathin ferromagnetic SrRuO$_3$ layer is sandwiched between largespin-orbit coupling SrIrO$_3$ layers, for which the conditions are notfavorable for the emergence of a net interfacial Dzyaloshinskii-Moriyainteraction. Previously the formation of skyrmions in the asymmetricSrRuO$_3$/SrIrO$_3$ bilayers was inferred from anomalous Hall resistance loopsshowing humplike features that resembled topological Hall effect contributions.Symmetric SrIrO$_3$/SrRuO$_3$/SrIrO$_3$ trilayers do not show hump anomalies inthe Hall loops. However, the anomalous Hall resistance loops of symmetricmultilayers, in which the trilayer is stacked several times, do exhibit thehumplike structures, similar to the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers.The origin of the Hall effect loop anomalies likely resides in unavoidabledifferences in the electronic and magnetic properties of the individualSrRuO$_3$ layers rather than in the formation of skyrmions.

Origin of the hump anomalies in the Hall resistance loops of ultrathin SrRuO$_3$/SrIrO$_3$ multilayers