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The challenge of parasitic bulk doping in Bi-based 3D topological insulatormaterials is still omnipresent, especially when preparing samples by molecularbeam epitaxy (MBE). Here, we present a heterostructure approach for epitaxialBSTS growth. A thin n-type Bi$_2$Se$_3$ (BS) layer is used as an epitaxial andelectrostatic seed which drastically improves the crystalline and electronicquality and reproducibility of the sample properties. In heterostructures of BSwith p-type (Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ (BSTS) we demonstrateintrinsic band bending effects to tune the electronic properties solely byadjusting the thickness of the respective layer. The analysis of weakanti-localization features in the magnetoconductance indicates a separation oftop and bottom conduction layers with increasing BSTS thickness. Bytemperature- and gate-dependent transport measurements, we show that the thinBS seed layer can be completely depleted within the heterostructure anddemonstrate electrostatic tuning of the bands via a back-gate throughout thewhole sample thickness.

physical review materials

Transport properties of band engineered p-n heterostructures of  epitaxial Bi$_2$Se$_3$/(Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$  topological insulators