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Transparent conducting or semiconducting oxides are important materials for(transparent) optoelectronics and power electronics applications. While most ofthese oxides can be doped n-type only with room-temperature electron mobilitieson the order of 100cm^2/Vs p-type oxides are needed for the realization ofpn-junction devices but typically suffer from exessively low (<<1cm^2/Vs) holemobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higherhole mobility, lacking a well-established understanding of its hole transportproperties. Moreover, growth of SnO is complicated by its metastability withrespect to SnO2 and Sn, requiring epitaxy for the realization of singlecrystalline material typically required for high-end applications. Here, wegive a comprehensive account on the epitaxial growth of SnO, its(meta)stability, and its thermoelectric transport properties in the context ofthe present literature. Textured and single-crystalline, unintentionally-dopedp-type SnO(001) films are grown by plasma-assisted molecular beam epitaxy. Themetastability of this semiconducting oxide is addressed theoretically throughan equilibrium phase diagram. Experimentally, the related SnO growth window israpidly determined by an in-situ growth kinetics study as function ofSn-to-O-plasma flux ratio and growth temperature. The presence of secondary Snand SnOx (1 < x <= 2) phases is comprehensively studied by different methods,indicating the presence of Sn3O4 or Sn as major secondary phases, as well as afully oxidized SnO2 film surface. The hole transport properties, Seebeckcoefficient, and density-of-states effective mass are determined and criticallydiscussed in the context of the present literature on SnO, considering itsanisotropic hole-effective mass.

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass