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The quaternary arsenide compounds XCuYAs (X=Zr, Hf; Y= Si, Ge) belong to thevast family of the 1111-type quaternary compounds, which possess outstandingphysical properties ranging from $p$-type transparent semiconductors tohigh-temperature Fe-based superconductors. In this paper, we study theelectronic structure topology, spin Hall effect (SHE) and spin Nernst effect(SNE) in these compounds based on density functional theory calculations. Firstwe find that the four considered compounds are Dirac semimetals with thenonsymmorphic symmetry-protected Dirac line nodes along the Brillouin zoneboundary $A$-$M$ and $X$-$R$ and low density of states (DOS) near the Fermilevel ($E_F$). Second, the intrinsic SHE and SNE in some of these consideredcompounds are found to be large. In particular, the calculated spin Hallconductivity (SHC) of HfCuGeAs is as large as -514 ($\hbar$/e)(S/cm). The spinNernst conductivity (SNC) of HfCuGeAs at room temperature is also large, being-0.73 ($\hbar$/e)(A/m-K). Moreover, both the magnitude and sign of the SHC andSNC in these compounds can be manipulated by varying either the appliedelectric field direction or spin current direction. The SHE and SNE in thesecompounds can also be enhanced by tuning the Fermi level via chemical doping orelectric gating. Finally, a detailed analysis of the band-decomposed and$k$-resolved spin Berry curvatures reveals that these large SHC and SNC as wellas their notable tunabilities originate largely from the presence of a largenumber of spin-orbit coupling-gapped Dirac points near the Fermi level as wellas the gapless Dirac line-nodes, which give rise to large spin Berrycurvatures. Our findings thus suggest that the four XCuYAs compounds not onlyprovide a valuable platform for exploring the interplay between SHE, SNE andband topology but also have promising applications in spintronics and spincaloritronics.

Tunable spin Hall and spin Nernst effects in Dirac line-node semimetals XCuYAs (X=Zr, Hf; Y=Si, Ge)