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We report on time-resolved mid-infrared-pump terahertz-transmission-probestudies of the topological-insulator materials $(Bi_{1-x}Sb_{x})_{2}Te_{3}$, inwhich by varying x charge carriers are chemically tuned to be of n-type orp-type. Relaxation dynamics is found to be different in various aspects fortransitions below or above the bandgap, which are selectively excited bychanging the pump-pulse energy. For the below-bandgap excitation, anexponential decay of the pump-probe signals is observed, which exhibits lineardependence on the pump-pulse fluence. In contrast, the relaxation dynamics forthe above-bandgap excitation is characterized by a compressed exponential decayand nonlinear fluence dependence at high pump flunences, which reflectsinteraction of the excited nonequilibrium states.

physical review materials

Relaxation dynamics of the optically driven nonequilibrium states in the  electron- and hole-doped topological-insulator materials  $(Bi_{1-x}Sb_{x})_{2}Te_{3}$