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Cross-sectional scanning tunneling microscopy (X-STM) was employed tocharacterize the InAs submonolayer quantum dots (SMLQDs) grown on top of aSi-doped GaAs(001) substrate in the presence of (2X4) and c(4X4) surfacereconstructions. Multiple layers were grown under different conditions to studytheir effects on the formation, morphology and local composition of the SMLQDs.The morphological and compositional variations in SMLQDs were observed by bothfilled and emptystate imaging. A detailed analysis of indium segregation in theSMLQDs layers was described by fitting local indium concentration profile witha standard segregation model. A strong influence of arsenic flux over theformation of the SMLQDs and indium incorporation was observed and reported. Weinvestigated the well-width fluctuations of the InGaAs quantum well (QW) inwhich SMLQDs were formed . The monolayer fluctuations of the well width werenegligible compared to the more pronounced compositional fluctuations in allthe layers. Keywords: Submonolayer quantum dots, Surface reconstruction, X-STM,Indium segregation

Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots