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Large (> 100 mm$^3$), relatively pure (type II) and low birefringence singlecrystal diamond can be produced by high pressure high temperature (HPHT)synthesis. In this study we examine a HPHT sample of good crystallineperfection, containing less than 1 ppb (part per billion carbon atoms) of boronimpurity atoms in the {001} growth sector and only tens of ppb of nitrogenimpurity atoms. It is shown that the boundaries between {111} and {113} growthsectors are decorated by negatively charged nitrogen vacancy centres (NV$^-$):no decoration is observed at any other type of growth sector interface. Thisdecoration can be used to calculated the relative {111} and {113} growth rates.The bulk (001) sector contains concentrations of luminescent point defects(excited with 488 and 532 nm wavelengths) below 10$^{11}$ cm$^{-3}$ (10$^{-3}$ppb). We observe the negatively charged silicon-vacancy (SiV$^-$) defect in thebulk {111} sectors along with a zero phonon line emission associated with anickel defect at 884 nm (1.40 eV). No preferential orientation is seen foreither NV$^-$ or SiV$^-$ defects, but the nickel related defect is orientedwith its trigonal axis along the <111> sector growth direction. Since theNV$^-$ defect is expected to readily re-orientate at HPHT diamond growthtemperatures, no preferential orientation is expected for this defect but thelack of preferential orientation of SiV$^-$ in {111} sectors is not explained.

Decoration of growth sector boundaries with single nitrogen vacancy centres in as-grown single crystal HPHT synthetic diamond