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We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in theoctahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecularbeam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML isdemonstrated. Structural and chemical studies using by x-ray diffraction,transmission electron microscopy, scanning tunneling microscopy and x-rayphotoelectron spectroscopy indicate high quality thin films. Further studiesshow that monolayer VSe$_2$ films on GaAs are not air-stable and aresusceptible to oxidation within a matter of hours, which indicates that aprotective capping layer should be employed for device applications. This workdemonstrates that VSe$_2$, a candidate van der Waals material for possiblespintronic and electronic applications, can be integrated with III-Vsemiconductors via epitaxial growth for 2D/3D hybrid devices.

Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy