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Controlling the strain level in nanowire heterostructures is critical forobtaining coherent interfaces of high crystalline quality and for the settingof functional properties such as photon emission, carrier mobility orpiezoelectricity. In a nanowire axial heterostructure featuring a sharpinterface, strain is set by the materials lattice mismatch and the nanowireradius. Here, we show that introducing a graded interface in nanowireheterostructures offers an additional parameter to control strain. For a giveninterface length and lattice mismatch, we first derive theoretically themaximum nanowire radius below which coherent growth is possible. We validatethese findings by growing and characterizing various In(Ga)As/GaAs nanowireheterostructures with graded interfaces. Furthermore, we perform a completechemical and structural characterization of the interface by combiningenergy-dispersive X-ray spectroscopy and high resolution transmission electronmicroscopy. In the case of coherent growth, we directly observe that themismatch strain relaxes elastically on the side walls of the nanowire aroundthe interface area, while the core of the nanowire remains partially strained.Moreover, our experimental data show good agreement with finite elementcalculations. This analysis confirms in particular that mechanical strain islargely reduced by interface grading. Overall, our work extends the parameterspace for the design of nanowire heterostructures, thus opening newopportunities for nanowire optoelectronics.

Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure