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Transition metal dichalcogenide (TMD) materials have received enormousattention due to their extraodinary optical and electrical properties, amongwhich MoS2 is the most typical one. As thickness increases from monolayer tomultilayer, the photoluminescence (PL) of MoS2 is gradually quenched due to thedirect-to-indirect band gap transition. How to enhance PL response and decreasethe layer dependence in multilayer MoS2 is still a challenging task. In thiswork, we report, for the first time, simultaneous generation of three PL peaksat around 1.3, 1.4 and 1.8 eV on multilayer MoS2 bubbles. The temperaturedependent PL measurements indicate that the two peaks at 1.3 and 1.4 eV arephonon-assisted indirect-gap transitions while the peak at 1.8 eV is thedirect-gap transition. Using first-principles calculations, the band structureevolution of multilayer MoS2 under strain is studied, from which the origin ofthe three PL peaks of MoS2 bubbles is further confirmed. Moreover, PL standingwaves are observed in MoS2 bubbles that creates Newton-Ring-like patterns. Thiswork demonstrates that the bubble structure may provide new opportunities forengineering the electronic structure and optical properties of layeredmaterials.

Simultaneous Generation of Direct- and Indirect-Gap Photoluminescence in Multilayer MoS2 Bubbles