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Boron phosphide has recently been identified as a potential high holemobility transparent conducting material. This promise arises from its low holeeffective masses. However, BP has a relatively small 2 eV indirect band gapwhich will affect its transparency. In this work, we computationally study bothoptical absorption across the indirect gap and phonon-limited electronictransport to quantify the potential of boron phosphide as a \emph{p}-typetransparent conductor. We find that phonon-mediated indirect optical absorptionis weak in the visible spectrum and that the phonon-limited hole mobility isvery high (around 900 cm$^2$/Vs) at room temperature. This exceptional mobilitycomes from a combination of low hole effective mass and very weak scattering bypolar phonon modes. We rationalize the weak scattering by the less ionicbonding in boron phosphide compared to oxides. We suggest this could be ageneral advantage of non-oxides for \emph{p}-type transparent conductingapplications. Using our computed properties, we assess the transparentconductor figure of merit of boron phosphide and shows that it exceeds by oneorder of magnitude that of established \emph{p}-type transparent conductors,confirming the potential of this material.

Boron phosphide as a \emph{p}-type transparent conductor: optical absorption and transport through electron-phonon coupling