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Controlling the crystalline structure of Hafnium Zirconate and its epitaxialrelationship to a semiconducting electrode has a high technological interest,as ferroelectric materials are key ingredients for emerging electronic devices.Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grownepitaxially on a GaN (0001) / Si (111) template. Since standard microscopytechniques do not allow to determine with certitude the crystalline structureof the film due to the weak scattering of oxygen, differentiated differentialphase contrast (DPC) Scanning Transmission Electron Microscopy is used to allowthe direct imaging of oxygen columns in the film. Combined with X-Raysdiffraction analysis, the polar nature and rhombohedral R3 symmetry of the filmare demonstrated.

Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films