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In semiconducting solar-cell absorbers, high absorption coefficient (alpha)near the band-edge region is critical to maximize the photocurrent generationand collection. Nevertheless, despite the importance of the band-edgeabsorption characteristics, the quantitative analysis of the band-edge opticaltransitions has not been performed. In this study, we have implementedsystematic density functional theory (DFT) calculation, focusing on theband-edge oscillator strength of seven practical solar cell absorbers (GaAs,InP, CdTe, CuInSe2, CuGaSe2, Cu2ZnSnSe4, and Cu2ZnSnS4) with zincblende,chalcopyrite and kesterite structures. We find that all these crystals exhibitthe giant oscillator strength near the band gap region, revealing the fact thatalpha in the band gap region is enhanced significantly by the anomalous highoscillator strength. In high-energy optical transitions, however, theoscillator strength reduces sharply and the absorption properties aredetermined primarily by the joint density-of-state contribution. Based on DFTresults, we show that the giant oscillator strength in the band edge regionoriginates from a unique tetrahedral-bonding structure, with a negligibleeffect of constituent atoms.

Giant oscillator strength in the band-edge light absorption of zincblende, chalcopyrite and kesterite solar cell materials