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We use density functional theory calculations to study the electronicstructure of epitaxial (111) interfaces of the topological crystallineinsulators SnSe and SnTe with the magnetic insulator EuS and the non-magneticinsulator CaTe, respectively. We consider both interface slab models with avacuum region and periodic heterostructures without vacuum. We find that gapsof 21 meV at the $\Gamma$ point and 9 meV at the M point arise in thetopological state at the SnSe/EuS interface, due to the magnetic proximityeffect, which breaks the time reversal symmetry. The surface state at $\Gamma$is shifted below the Fermi level by 88 meV and the surface state at M isshifted above the Fermi level by 47 meV, owing to band bending at theinterface. By comparison, the topological state at the interface of SnTe/CaTeis unperturbed by the presence of non-magnetic CaTe.

Topological Properties of SnSe/EuS and SnTe/CaTe Interfaces