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We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$crystals grown by chemical vapour transport (CVT) under varying conditions.Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$$<$ 630$^{\circ}$C), there is a significant increase in both the CDW transitiontemperature and the residual resistance ratio (RRR) obtained from electricaltransport measurements. Using x-ray photoelectron spectroscopy (XPS), wecorrelate the observed CDW properties with stoichiometry and the nature ofdefects. In addition, we have optimized a method to grow ultra-high purity1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ =(112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49,which is the highest reported thus far. This work highlights the sensitivity ofthe CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and theimportance of controlling the crystal growth conditions of strongly-correlatedtransition metal dichalcogenides.

Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2$