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The large Land\'{e} g-factor, high spin-orbit coupling, and low effectivemass of the two-dimensional electron gas in InSb quantum wells combined withproximal superconductivity may realize a scalable platform for topologicalquantum computation. Aluminum thin films directly deposited on top of InSbplanar structures result in the formation of a reactive AlInSb layer at theinterface. This interlayer progressively consumes the whole Al film, resultingin a disordered AlInSb layer after few months at room temperature. We report ona heterostructure design that results in a significant increase of thedurability of these hybrid Al-InSb heterostructures with the preservation of apure Al film and sharp superconductor-semiconductor interface for more than oneyear. Two monolayers of epitaxial InAs at the superconductor-semiconductorinterface prevent interfacial reactivity as evidenced by X-ray reflectivity andenergy dispersive spectroscopy measurements. Structural characterizations ofthe Al films by transmission electron microscopy reveal the presence of tens ofnanometers wide grains predominantly oriented with Al(110) parallel toInSb(001).

Toward durable Al-InSb hybrid heterostructures via epitaxy of 2ML interfacial InAs screening layers