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Molecular beam epitaxy offers an exciting avenue for investigating thebehavior of topological semimetal Cd3As2, by providing routes for doping,alloying, strain engineering, and heterostructure formation. To date, however,minimal exploration has been devoted to the impact of defects that areincorporated into epilayers due to contraints imposed by the substrate andnarrow growth window. Here, we use a combination of lattice-matched ZnxCd1-xTebuffer layers, miscut substrates and broadband illumination to study howdislocations, twins and point defects influence the electron mobility ofCd3As2. A combination of defect suppression approaches produces Cd3As2epilayers with electron mobilities upwards of 15,000 cm2/V-s at roomtemperature.

Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them