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Understanding of the metal-insulator transition (MIT) in correlatedtransition-metal oxides is a fascinating topic in condensed matter physics anda precise control of such transitions plays a key role in developing novelelectronic devices. Here we report an effective tuning of the MIT in epitaxialSrVO3 (SVO) films by expanding the out-of-plane lattice constant withoutchanging in-plane lattice parameters, through helium ion irradiation. Uponincrease of the ion fluence, we observe a MIT with a crossover from metallic toinsulating state in SVO films. A combination of transport and magnetoresistancemeasurements in SVO at low temperatures reveals that the observed MIT is mainlyascribed to electron-electron interactions rather than disorder-inducedlocalization. Moreover, these results are well supported by the combination ofdensity functional theory and dynamical mean field theory (DFT+DMFT)calculations, further confirming the decrease of the bandwidth and the enhancedelectron-electron interactions resulting from the expansion of out-of-planelattice constant. These findings provide new insights into the understanding ofMIT in correlated oxides and perspectives for the design of unexpectedfunctional devices based on strongly correlated electrons.

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain