English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The structural and nanochemical properties of thin $AlO_x$ layers aredecisive for the performance of advanced electronic devices. For example, theyare frequently used as tunnel barriers in Josephson junction-basedsuperconducting devices. However, systematic studies of the influence ofoxidation parameters on structural and nanochemical properties are rare up tonow, as most studies focus on the electrical properties of $AlO_x$ layers. Thisstudy aims to close this gap by applying transmission electron microscopy incombination with electron energy loss spectroscopy to analyze the structuraland nanochemical properties of differently fabricated $AlO_x$ layers andcorrelate them with fabrication parameters. With respect to the application of$AlO_x$ as tunnel barrier in superconducting Josephson junctions,$Al/AlO_x/Al$-layer systems were deposited on Si substrates. We will show thatthe oxygen content and structure of amorphous $AlO_x$ layers is stronglydependent on the fabrication process and oxidation parameters. Dynamic andstatic oxidation of Al yields oxygen-deficient amorphous $AlO_x$ layers, wherethe oxygen content ranges from x = 0.5 to x = 1.3 depending on oxygen pressureand substrate temperature. Thicker layers of stoichiometric crystalline$\gamma-Al_2O_3$ layers were grown by electron-beam evaporation of $Al_2O_3$and reactive sputter deposition.

Structural and Nanochemical Properties of AlOx Layers in $Al/AlO_x/Al$-Layer Systems for Josephson Junctions