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Two-dimensional molybdenum disulfide (MoS2) is an excellent channel materialfor ultra-thin field effect transistors. However, high contact resistanceacross the metal-MoS2 interface continues to limit its widespread realization.Here, using atomic-resolution analytical scanning transmission electronmicroscopy (STEM) together with first principle calculations, we show that thiscontact problem is a fundamental limitation from the bonding and interactionsat the metal-MoS2 interface that cannot be solved by improved depositionengineering. STEM analysis in conjunction with theory shows that when MoS2 isin contact with Ti, a metal with a high affinity to form strong bonds withsulfur, there is a release of S from Mo along with the formation of smallTi/TixSy clusters. A destruction of the MoS2 layers and penetration of metalcan also be expected. The design of true high-mobility metal-MoS2 contacts willrequire the optimal selection of the metal or alloy based on their bondinginteractions with the MoS2 surface. This can be advanced by evaluation ofbinding energies with increasing the number of atoms within metal clusters.

An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution