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MnBi2Te4 has attracted tremendous research interest recently as the firstintrinsic antiferromagnetic (AF) topological insulator. It undergoes along-range AF order at TN = 24 K accompanied with a cusp-like anomaly in themetallic resistivity. Here, we studied the effect of hydrostatic pressure onits electrical transport properties up to 12.5 GPa by using a cubic anvil cellapparatus. We find that TN determined from the resistivity anomaly firstincreases slightly with pressure and then decreases until vanished completelyat ~7 GPa. Intriguingly, its resistivity rho(T) is enhanced gradually bypressure, and evolves from metallic to activated behavior as the AF order issuppressed. From the Hall resistivity measurements, we confirm that the n-typecarriers dominate the transport properties and the carrier density is raised bypressure. In addition, the critical magnetic field Hc1 ~3.3 T at 0 GPa for thespin-flop transition to the canted AF state is found to increase to ~ 5 T and7.5 T at 1 and 3 GPa. High-pressure XRD evidenced no structural transition upto 12.8 GPa. Based on the Hall resistivity results and first-principlescalculations, we proposed that the intralayer direct AF interactions arestrengthened by pressure and the competition between AF and FM interactions notonly prevents long-range magnetic order but also promotes charge carrierlocalizations through enhance magnetic fluctuations at high pressures.

Suppression of the antiferromagnetic metallic state in the pressurized MnBi2Te4 single crystal