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We report on the selective-area chemical beam epitaxial growth of InAsin-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coatedInP(001), InP(111)B, and InP(110) substrates to establish a scalable platformfor topological superconductor networks. Top-view scanning electron micrographsshow excellent surface selectivity and dependence of major facet planes on thesubstrate orientations and ridge directions, and the ratios of the surfaceenergies of the major facet planes were estimated. Detailed structuralproperties and defects in the InAs nanowires (NWs) were characterized bytransmission electron microscopic analysis of cross-sections perpendicular tothe NW ridge direction and along the NW ridge direction. Electrical transportproperties of the InAs NWs were investigated using Hall bars, a field effectmobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflectthe strong spin-orbit interaction and phase-coherent transport characteristicin the selectively grown InAs systems. This study demonstrates thatselective-area chemical beam epitaxy is a scalable approach to realizesemiconductor 1-D channel networks with the excellent surface selectivity andthis material system is suitable for quantum transport studies.

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces