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In view of their immensely intriguing properties, two dimensional materialsare being intensely researched in search of novel phenomena and diverseapplication interests, however, studies on the realization of nanocomposites inthe application-worthy thin-film platform are rare. Here we have grown MoS2-hBNcomposite thin films on different substrates by the pulsed laser depositiontechnique and made comparative studies with the pristine MoS2 and hBN films.The Raman, XPS and HRTEM confirm the concomitant presence of both the 1T(conducting) and 2H (semiconducting) polymorphs of MoS2 in the composite film.Interestingly, a peculiar reentrant semiconductor-metal-insulator transition isseen in the composite film which is absent in the MoS2 film, and it correlateswell with the signatures of phonon softening seen in temperature-dependentRaman spectroscopy. Furthermore, electrostatic force microscopy reveals thepresence of three distinct regions (metallic, semiconducting, and insulating)in the composite film with differing contact potentials and enhanced propensityfor charge transfer with respect to pristine MoS2. A triboelectricnanogenerator device containing biphasic composite film as an electron acceptorexhibits more than twofold (sixfold) enhancement in peak-to-peak output voltageas compared to the pristine MoS2 (hBN) film. These observations bring out thepotential of nanocomposite thin films for unfolding emergent phenomena andtechnological applications.

Coexisting 1T/2H polymorphs, reentrant resistivity behavior, and charge distribution in MoS2-hBN 2D/2D composite thin films