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The incubation time preceding nucleation and growth of surface nanostructuresis interesting from a fundamental viewpoint but also of practical relevance asit determines statistical properties of nanostructure ensembles such as sizehomogeneity. Using in situ reflection high-energy electron diffraction, weaccurately deduce the incubation times for Ga-assisted GaAs nanowires grown onunpatterned Si(111) substrates by molecular beam epitaxy under differentconditions. We develop a nucleation model that explains and fits very well thedata. We find that, for a given temperature and Ga flux, the incubation timealways increases with decreasing As flux and becomes infinite at a certainminimum flux, which is larger for higher temperature. For given As and Gafluxes, the incubation time always increases with temperature and rapidly tendsto infinity above 640 {\deg}C under typical conditions. The strong temperaturedependence of the incubation time is reflected in a similar variation of thenanowire number density with temperature. Our analysis provides understandingand guidance for choosing appropriate growth conditions that avoid unnecessarymaterial consumption, long nucleation delays, and highly inhomogeneousensembles of nanowires. On a more general ground, the existence of a minimumflux and maximum temperature for growing surface nanostructures should be ageneral phenomenon pertaining for a wide range of material-substratecombinations.

Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)