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Applications of nitrogen-vacancy (NV) centers in diamond in quantumtechnology have attracted considerable attention in recent years. Deterministicgeneration of ensembles of NV centers can advance the research on quantumsensing, many-body quantum systems, multipartite entanglement and so on. Herewe report the complete process of controlled generation of NV centers indiamond as well as their characterisation: growing diamond films throughchemical vapor deposition (CVD), ion implantation and spectroscopiccharacterization of the defect centers using a confocal microscope. Amicrowave-assisted CVD set-up is presented which we constructed for thepreparation of single-crystalline homoepitaxial diamond films. The films wereprepared with minimized nitrogen concentration, which is confirmed throughphotoluminescence measurements. We demonstrate an in situ ultra high vacuum(UHV) implantation and heating process for creation of NV centers using a novelexperimental set-up. For the first time hot implantation has been shown whichprevents surface charging effects. We do not observe graphitization due to UHVheating. By optimizing the implantation parameters it has been possible toimplant NV centers in a precise way. We present large area mapping of thesamples to determine the distribution of the centers and describe thecharacterization of the centers by spectroscopic techniques. Reducing thedecoherence caused by environmental noise is of primary importance for manyapplications in quantum technology. We demonstrate improvement on coherencetime T_{2} of the NV spins by suppression of their interaction with thesurrounding spin-bath using robust dynamical decoupling sequences.

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CVD-growth of ultra-pure diamond, generation of NV centers by  ion-implantation and their spectroscopic characterization for quantum  technological applications