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We report on the study of magneto-photogalvanic and magnetotransportphenomena in 200 nm partially strained HgTe films. This thickness is slightlylarger than the estimated critical thickness of lattice relaxation leaving thefilm partially relaxed with the value of the energy gap close to zero. We showthat illumination of HgTe films with monochromatic terahertz laser radiationresults in a giant resonant photocurrent caused by the cyclotron resonance inthe surface states. The resonant photocurrent is also detected in the referencefully strained 80 nm HgTe films previously shown to be fully gapped 3Dtopological insulators. We show that the resonance positions in both types offilms almost coincide demonstrating the existence of topologically protectedsurface states in thick HgTe films. The conclusion is supported bymagnetotransport experiments.

Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films