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Crystals grow by gathering and bonding of atoms to form an ordered structure.Typically, the growth is equally probable in all crystalline directions, butsometimes, it is not, as is the case of nanowire growth. Nanowire growth isexplained, in most cases, by the presence of liquid metal droplets that mediatebetween an incoming flux of atoms and a substrate or an existing crystalnucleus, while defining the lateral dimension. Here, we report and explain apreviously unknown mode of non-isotropic crystal growth observed in twowurtzite semiconductors, InN and ZnO. Being of polar structure, wurtzitecrystals possess a built-in internal electric field. Thermally-excitied chargesscreen the built-in electric field during growth in a non-uniform, yetsymmetric, manner, causing the formation of symmetric domains of invertedpolarity. These domains limit the lateral expansion of the crystal, inducing afiber growth mode. The mechanism described here elucidates previouslyunexplained phenomena in the growth of group III-nitrides on sapphire,emphasizing the need to consider the effects of built-in electric fields in thegrowth of polar semiconductors.

Polar charge induced self-assembly: An electric effect that causes non-isotropic nanorod growth in wurtzite semiconductors