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(001)-oriented thin films of the three-dimensional Dirac semimetal cadmiumarsenide can realize a quantum spin Hall insulator and other kinds oftopological physics, all within the flexible architecture of epitaxialheterostructures. Here, we report a method for growing (001) cadmium arsenidefilms using molecular beam epitaxy. The introduction of a thin indium arsenidewetting layer improves surface morphology and structural characteristics, asmeasured by x-ray diffraction and reflectivity, atomic force microscopy, andscanning transmission electron microscopy. The electron mobility of 50-nm-thickfilms is found to be 9300 cm2/Vs at 2 K, comparable to the highest-qualityfilms grown in the conventional (112) orientation. This work demonstrates asimple experimental framework for exploring topological phases that arepredicted to exist in proximity to the three-dimensional Dirac semimetal phase.

Basal-plane growth of cadmium arsenide by molecular beam epitaxy