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We have investigated the electronic and optical properties of epitaxialLa1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-leveland valence-band x-ray photoemission features monotonically shift to lowerbinding energy with increasing x, indicating downward movement of the Fermilevel toward to the valence band maximum. Both Fe 2p and O 1s spectra broadento higher binding energy with increasing x, consistent with delocalization ofSr-induced holes in the Fe 3d/O 2p hybridized valence band. Combining X-rayvalence band photoemission and O K-edge x-ray absorption data, we map theevolution of the occupied and unoccupied bands and observe a narrowing of thegap, along with a transfer of state density from just below to just above theFermi level, resulting from hole doping. In-plane transport measurementsconfirm that the material becomes a p-type semiconductor at lower doping levelsand exhibits a insulator-to-metal transition at x equal to 1. Sub-gap opticaltransitions revealed by spectroscopic ellipsometry are explained based oninsight from theoretical densities of states and first-principles calculationsof optical absorption spectra.

Hole-Induced Electronic and Optical Transitions in La1-xSrxFeO3 Epitaxial Thin Films