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We investigate the diffusive electron-transport properties of charge-dopedgraphene ribbons and nanoribbons with imperfect edges. We consider differentregimes of edge scattering, ranging from wide graphene ribbons with (partially)diffusive edge scattering to ribbons with large width variations andnanoribbons with atomistic edge roughness. For the latter, we introduce anapproach based on pseudopotentials, allowing for an atomistic treatment of theband structure and the scattering potential, on the self-consistent solution ofthe Boltzmann transport equation within the relaxation-time approximation andtaking into account the edge-roughness properties and statistics. The resultingresistivity depends strongly on the ribbon orientation, with zigzag (armchair)ribbons showing the smallest (largest) resistivity and intermediate ribbonorientations exhibiting intermediate resistivity values. The results also showclear resistivity peaks, corresponding to peaks in the density of states due tothe confinement-induced subband quantization, except for armchair-edge ribbonsthat show a very strong width dependence because of their claromatic behavior.Furthermore, we identify a strong interplay between the relative position ofthe two valleys of graphene along the transport direction, the correlationprofile of the atomistic edge roughness, and the chiral valley modes, leadingto a peculiar strongly suppressed resistivity regime, most pronounced for thezigzag orientation.

Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness