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Extremely large positive magnetoresistance (XMR) was found in a nonmagneticsemimetal InBi. Using several single crystals with different residualresistivity ratios (RRRs), we revealed that the XMR strongly depended on theRRR (sample quality). Assuming that there were no changes in effective mass m*and carrier concentrations in these single crystals, this dependence wasexplained by a semiclassical two-carrier model. First-principle calculationsincluding the spin-orbit interactions (SOI) unveiled that InBi had acompensated carrier balance and SOI-induced "hidden" three-dimensional (3D)Dirac bands at the M and R points. Because the small m* and the large carriermobilities will be realized, these hidden 3D Dirac bands should play animportant role for the XMR in InBi. We suggest that this feature can beemployed as a novel strategy for the creation of XMR semimetals.

Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi