English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Graphene on silicon carbide (SiC) bears great potential for future grapheneelectronic applications because it is available on the wafer-scale and itsproperties can be custom-tailored by inserting various atoms into thegraphene/SiC interface. It remains unclear, however, how atoms can cross theimpermeable graphene layer during this widely used intercalation process. Herewe demonstrate that, in contrast to the current consensus, graphene layers onSiC are not homogeneous, but instead composed of domains of differentcrystallographic stacking. We show that these domains are intrinsically formedduring growth and that dislocations between domains dominate the(de)intercalation dynamics. Tailoring these dislocation networks, e.g. throughsubstrate engineering, will increase the control over the intercalation processand could open a playground for topological and correlated electron phenomenain two-dimensional superstructures.

Stacking domains in graphene on silicon carbide: a pathway for intercalation