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Ferroelectric field-effect doping has emerged as a powerful approach tomanipulate the ground state of correlated oxides, opening the door to a newclass of field-effect devices. However, this potential is not fully exploitedso far, since the size of the field-effect doping is generally much smallerthan expected. Here we study the limiting factors through magneto-transport,scanning transmission electron and piezo-response force microscopy inferroelectric/superconductor (YBa2Cu3O7-{\delta} /BiFeO3) heterostructures, amodel system showing very strong field-effects. Still, we find that they arelimited in the first place by an incomplete ferroelectric switching. This canbe explained by the existence of a preferential polarization direction set bythe atomic terminations at the interface. More importantly, we also find thatthe field-effect carrier doping is accompanied by a strong modulation of thecarrier mobility. Besides making quantification of field-effects via Hallmeasurements not straightforward, this finding suggests that ferroelectricpoling produces structural changes (e.g. charged defects or structuraldistortions) in the correlated oxide channel. Those findings have importantconsequences for the understanding of ferroelectric field-effects and for thestrategies to further enhance them.

Factors limiting ferroelectric field-effect doping in complex-oxide heterostructures