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An important challenge in the field of topological materials is to carefullydisentangle the electronic transport contribution of the topological surfacestates from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples,bulk single crystals and thin films exposed to air during fabrication processesare known to be bulk conducting, with the chemical potential in the bulkconduction band. For Bi$_2$Te$_3$ thin films grown by molecular beam epitaxy,we combine structural characterization (transmission electron microscopy),chemical surface analysis as function of time (x-ray photoelectronspectroscopy) and magnetotransport analysis to understand the low defectdensity and record high bulk electron mobility once charge is doped into thebulk by surface degradation. Carrier densities and electronic mobilitiesextracted from the Hall effect and the quantum oscillations are consistent andreveal a large bulk carrier mobility. Because of the cylindrical shape of thebulk Fermi surface, the angle dependence of the bulk magnetoresistanceoscillations is two-dimensional in nature.

Bulk contribution to magnetotransport properties of low defect-density Bi$_2$Te$_3$ topological insulator thin films