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Magnetoresistive random-access memory (MRAM) is poised to become anext-generation information storage device. Yet, many materials challengesremain unsolved before it can become a widely used memory storage solution.Among them, an urgent need is to identify a material system that is suitablefor downscaling and is compatible with low-power logic applications.Self-assembled, vertically-aligned La_{2/3}Sr_{1/3}MnO_3:ZnO nanocomposites, inwhich La_{2/3}Sr_{1/3}MnO_3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM applications by combiningtheir superior electric, magnetic (B), and optical properties. In this paper,we show the results of electrical current induced magnetic hysteresis inmagneto-resistance measurements in these nano-pillar composites. We observethat when the current level is low, for example, 1 uA, the magneto-resistancedisplays a linear, negative, non-hysteretic B field dependence. Surprisingly,when a large current is used, I > 10 uA, a hysteretic behavior is observed whenthe B field is swept in the up and down directions. This hysteresis weakens asthe sample temperature is increased. A possible spin-valve mechanism related tothis electrical current induced magnetic hysteresis is proposed and discussed.

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites