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We present results on the growth of CdTe-HgTe core-shell nanowires, arealization of a quasi one-dimensional heterostructure of the topologicalinsulator HgTe. The growth is a two step process consisting of the growth ofsingle crystalline zinc blende CdTe nanowires with the vapor-liquid-solidmethod and the overgrowth of these wires with HgTe such that a closed shell isformed around the CdTe core structure. The CdTe wire growth is monitored byRHEED allowing us to infer information on the crystal properties from theelectron diffraction pattern. This information is used to find and control theoptimal growth temperature. High quality single crystal CdTe nanowires growwith a preferred orientation. For the growth of the conductive HgTe shellstructure we find that the supplied Hg:Te ratio is the crucial parameter tofacilitate growth on all surface facets.

CdTe-HgTe core-shell nanowire growth controlled by RHEED