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We have developed a device fabrication process to pattern graphene intonanostructures of arbitrary shape and control their electronic properties usinglocal electrostatic gates. Electronic transport measurements have been used tocharacterize locally gated bipolar graphene $p$-$n$-$p$ junctions. We observe aseries of fractional quantum Hall conductance plateaus at high magnetic fieldsas the local charge density is varied in the $p$ and $n$ regions. Thesefractional plateaus, originating from chiral edge states equilibration at the$p$-$n$ interfaces, exhibit sensitivity to inter-edge backscattering which isfound to be strong for some of the plateuas and much weaker for other plateaus.We use this effect to explore the role of backscattering and estimate disorderstrength in our graphene devices.

Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction