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We report the observation of tunneling anisotropic magnetoresistance effect(TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observedtwo-fold anisotropy of the resistance can be switched by reversing the biasvoltage, suggesting that the effect originates from the interference of thespin-orbit coupling at the interfaces. Corresponding model calculationsreproduce the experimental findings very well.Comment: 5 pages, 3 figures, submitted to Phys. Rev. Let

physical review letters

Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Fe</mml:mi><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi><mml:mo>/</mml:mo><mml:mi>Au</mml:mi></mml:math>Tunnel Junctions

Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling inFe/GaAs/AuTunnel Junctions