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We investigate the electronic structure of LiV2O4, for which heavy fermionbehavior has been observed in various experiments, by the combination of thelocal density approximation and dynamical mean field theory. To obtain resultsat zero temperature, we employ the projective quantum Monte Carlo method as animpurity solver. Our results show that the strongly correlated a1g band is alightly doped Mott insulator which -at low temperatures- shows a sharp (heavy)quasiparticle peak just above the Fermi level, which is consistent with recentphotoemission experiment by Shimoyamada et al. [Phys. Rev. Lett. 96 026403(2006)].Comment: 4 pages, 5 figure

physical review letters

Doped Mott Insulator as the Origin of Heavy-Fermion Behavior in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>LiV</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math>

Doped Mott Insulator as the Origin of Heavy-Fermion Behavior inLiV2O4