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We propose a technique for achieving large improvements in carrier mobilitiesin 2- and 1-dimensional semiconductor nanostructures by modifying theirdielectric environments. We show that by coating the nanostructures withhigh-$\kappa$ dielectrics, scattering from Coulombic impurities can be stronglydamped. Though screening is also weakened, the damping of Coulombic scatteringis much larger, and the resulting improvement in mobilities of carriers can beas much as an order of magnitude for thin 2D semiconductor membranes, and morefor semiconductor nanowires.

Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering