English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The photo-induced electron and hole transfer across thesemiconductor-dielectric interface in trap dominated p-type organicfield-effect transistors (OFETs) has been investigated. It has been observedthat the transfer of electrons into the dielectric results in a decrease of thefield-effect mobility of polarons, suggesting that additional shallow traps aregenerated in the conduction channel. Using this effect, the dependence of thefield-effect mobility on the density of shallow traps, mu(N), has beenmeasured, which allowed to estimate the average polaron trapping time, tau_tr =50 +- 10 ps, and the density of shallow traps, N_0 = (3 +- 0.5)*10^11 cm^-2, inthe channel of single-crystal tetracene devices

Effect of Interfacial Shallow Traps on Polaron Transport at the Surface of Organic Semiconductors