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We propose a method for all-electrical initialization, control and readout ofthe spin of single ions substituted into a semiconductor. Mn ions in GaAs forma natural example. In the ion's ground state the Mn core spin magnetic momentlocks antiparallel to the spin and orbital magnetic moment of a bound valencehole from the GaAs host. Direct electrical manipulation of the ion spin ispossible because electric fields manipulate the orbital wave function of thehole, and through the spin-orbit coupling the spin is reoriented as well.Coupling two or more ion spins can be achieved using electrical gates tocontrol the size of the valence hole wave function near the semiconductorsurface. This proposal for coherent manipulation of individual ionic spins andcontrolled coupling of ionic spins via electrical gates alone may findapplications in extremely high density information storage and in scalablecoherent or quantum information processing.Comment: 5 pages, 3 figure

All-Electrical Control of Single Ion Spins in a Semiconductor